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item | value |
Place of Origin | China |
Jiangsu | |
Brand Name | BOYAN |
Model Number | SiO2 |
Type | Quartz Wafer |
Materia | Synthetic Quartz Crystal |
Cutting Angle | X/Y/Z/AT32°/33°/35°/36°/BT/ST42.75°-cut etc per Customized |
Diameter/size | 3" 4" 6" 8" |
Tol(±) for Diameter | <0.20 mm |
LTV (5mmx5mm) | <1.5μm |
TTV | <1.5~3 μm |
Bow | -30 |
Warp | <40μm |
PLTV(<0.5um) | ≥95%(5mm*5mm) |
Orientation Flat | All available |




New Crystal | ||||||||
Cu2O | Fe2O3 | SnO2 | Fe2O3 | MnO | ||||
ZnO/Al2O3 | ||||||||
Superconducting thin film | ||||||||
SrTiO3 | YSZ | MgO | KTaO3 | |||||
Functional epitaxial thin films | ||||||||
SiO2 + Si | GaN on Sapphire wafer | Pt/Ti/SiO2/Si wafer | ||||||
Photo Transistor substrate | ||||||||
GGG substrate | Nb:SrTiO3 substrate | Fe:SrTiO3 substrate | PMN-PT substrate | |||||
Photo Transistor substrate | ||||||||
TiO2 Rutile substrate | SiO2 quartz monocrystal substrate | YAlO3 substrate | ||||||
quartz glass substrate | YAG substrate | LiNbO3 substrate | LiTaO3 substrate | |||||
Semiconducting crystal substrate | ||||||||
InSb substrate | Si substrate | InP substrate | InAs substrate | |||||
Fluo-chloride crystal substrate | ||||||||
MgF2 substrate | CaF2 substrate | BaF2 substrate | LiF substrate | KCl substrate | ||||
NaCl substrate | KBr substrate | |||||||
III-V crystal substrate | ||||||||
Sapphire wafer | GaN monocrystal substrate | LiAlO2 substrate | MgAl2O4 substrate | |||||
II-VI crystal substrate | ||||||||
ZnO high resistivity substrate | ZnO low resistivity substrate | Ga:ZnO substrate | ||||||
Ceramic substrate | ||||||||
Al2O3 96% substrate | AlN ceramic substrate | YSZ ceramic | ||||||
Other materials | ||||||||
Cu metal monocrystal substrate | Al metal monocrystal substrate | KTa(1-x)Nb(x)O3 | ||||||
Mg metal monocrystal substrate | K9 glass substrate | Sapphire Tube | Ruby Tube | |||||
FTO Glass | ITO glass | |||||||